PROPERTIES OF VANADIUM IN INP

被引:16
作者
LAMBERT, B [1 ]
DEVEAUD, B [1 ]
TOUDIC, Y [1 ]
PELOUS, G [1 ]
PARIS, JC [1 ]
GRANDPIERRE, G [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,LAB ICM,F-22301 LANNION,FRANCE
关键词
D O I
10.1016/0038-1098(83)90914-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:337 / 340
页数:4
相关论文
共 20 条
  • [1] ABAGYAN SA, 1975, SOV PHYS SEMICOND+, V8, P1096
  • [2] ALLEN JW, 1980, 1980 P SEM 3 5 MAT N
  • [3] BACHMAN KJ, 1974, J ELECTROCHEM SO JUN, P835
  • [4] GROWTH OF INP CRYSTALS FROM MELT
    BACHMANN, KJ
    BUEHLER, E
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) : 279 - 302
  • [5] PHOTO-LUMINESCENCE OF CDS-V, CU CRYSTALS
    BUHMANN, D
    SCHULZ, HJ
    THIEDE, M
    [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 5360 - 5368
  • [6] THE SINGLE-CRYSTAL GROWTH AND ELECTRICAL-PROPERTIES OF COBALT-DOPED INDIUM-PHOSPHIDE
    COCKAYNE, B
    MACEWAN, WR
    BROWN, GT
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (02) : 263 - 267
  • [7] GUILLOT G, COMMUNICATION
  • [8] CHARGE-TRANSFER CR-2+(D4)-]CR-1+(D5) INDUCED BY HYDROSTATIC-PRESSURE IN CHROMIUM-DOPED GAAS
    HENNEL, AM
    MARTINEZ, G
    [J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1039 - 1045
  • [9] SPECTROSCOPIC STUDY OF VANADIUM IN GAP AND GAAS
    KAUFMANN, U
    ENNEN, H
    SCHNEIDER, J
    WORNER, R
    WEBER, J
    KOHL, F
    [J]. PHYSICAL REVIEW B, 1982, 25 (09) : 5598 - 5606
  • [10] ELECTRON-PARAMAGNETIC RESONANCE OF INP-CO-2+
    LAMBERT, B
    DEVEAUD, B
    TOUDIC, Y
    CLERJAUD, B
    [J]. PHYSICA B & C, 1983, 116 (1-3): : 467 - 469