DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H

被引：5

作者：

STUTZMANN, M

BIEGELSEN, DK

STREET, RA

机构：

[1] Xerox Palo Alto Research Cent, Palo, Alto, CA, USA, Xerox Palo Alto Research Cent, Palo Alto, CA, USA

来源：

关键词：

*Work supported by the Solar Energy Research Institute;

D O I：

10.1016/0022-3093(85)90741-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：647 / 650

页数：4

共 5 条

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274

[2] LOCALIZED STATES IN COMPENSATED A-SI-H [J].

MARSHALL, JM ;

STREET, RA ;

THOMPSON, MJ .

PHYSICAL REVIEW B, 1984, 29 (04) :2331-2333

[3] RECOMBINATION IN ALPHA-SI-H - SPIN-DEPENDENT EFFECTS [J].

STREET, RA .

PHYSICAL REVIEW B, 1982, 26 (07) :3588-3604

[4] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].

STREET, RA ;

BIEGELSEN, DK ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1981, 24 (02) :969-984

[5] DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

STREET, RA .