AUGER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES

被引：16

作者：

GREIN, CH ^{[1
]}

YOUNG, PM ^{[1
]}

EHRENREICH, H ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 08期

关键词：

AUGER LIFETIME; INGASB/INAS SUPERLATTICES; RADIATIVE RECOMBINATION LIFETIME;

D O I：

10.1007/BF02817530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantitative calculations are reported of both band-to band Auger and radiative recombination lifetimes in thin-layered type II InxGa1-xSb/InAs superlattices with energy gaps in the 5-17 mum range, using accurate band structure and numerical techniques. Results for an 11 mum superlattice are compared with similar calculations for bulk HgCdTe and a HgTe/CdTe superlattice having the same energy gap. The results show the n-type Auger rates to be comparable and the p-type rates to be suppressed by three orders of magnitude in some experimentally realizable structures. Thus, well fabricated III-V superlattices appear to be excellent candidates as a new class of infrared detectors.

引用

页码：1093 / 1096

页数：4

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