A REPRODUCIBLE LPE GROWTH OF HIGH-QUALITY IN 1-XGAXP1-YASY LAYERS ON GAAS BY THE CONTROL OF PHOSPHORUS VAPOR ON THE SUBSTRATE

被引：11

作者：

SUZUKI, A ^{[1
]}

MURAKAMI, T ^{[1
]}

KURIYAMA, Y ^{[1
]}

MATSUNAMI, H ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1143/JJAP.21.L363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L363 / L365

页数：3

共 8 条

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[7] LPE GROWTH AND PHOTO-LUMINESCENCE OF IN1-XGAXP1-YASY ON GAAS [J].

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[8] LATTICE-MATCHED LPE GROWTH OF IN1-XGAXP1-YASY LAYERS ON (100) GAAS SUBSTRATES [J].

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