SELECTIVE ETCHING CHARACTERISTICS OF HF FOR ALXGA1-XAS/GAAS

被引：48

作者：

WU, XS ^{[1
]}

COLDREN, LA ^{[1
]}

MERZ, JL ^{[1
]}

机构：

[1] ACAD SCI CHINA,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA

来源：

关键词：

D O I：

10.1049/el:19850394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：558 / 559

页数：2

共 7 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS
ADACHI, S
OE, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2427 - 2435
[2] KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532
[3] KERN W, 1978, RCA REV, V39, P227
[4] KONIYA S, 1976, J APPL PHYS, V47, P3367
[5] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS
LOGAN, RA
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176
[6] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
MERZ, JL
LOGAN, RA
SERGENT, AM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82
[7] Yuan Y. R., 1983, Journal of Lightwave Technology, VLT-1, P630, DOI 10.1109/JLT.1983.1072156