DETECTION OF GA VACANCIES IN ELECTRON-IRRADIATED GAAS BY POSITRONS

[1] [Anonymous], 1983, POSITRON SOLID STATE

[2] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366

[3] STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2051 - 2068

[4] DLUBEK G, UNPUB J PHYS C

[5] HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI, V12

[6] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 371 - 383

[7] PONDS D, 1985, J PHYS C SOLID STATE, V18, P3839

[8] PONDS D, 1981, PHYS REV LETT, V47, P1293

[9] PUSKA MJ, UNPUB

[10] AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (01): : 43 - 54

[1] [Anonymous], 1983, POSITRON SOLID STATE

[2] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366

[3] STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2051 - 2068

[4] DLUBEK G, UNPUB J PHYS C

[5] HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI, V12

[6] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 371 - 383

[7] PONDS D, 1985, J PHYS C SOLID STATE, V18, P3839

[8] PONDS D, 1981, PHYS REV LETT, V47, P1293

[9] PUSKA MJ, UNPUB

[10] AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (01): : 43 - 54