KINETICS OF AMORPHOUS PHASE FORMATION AND ITS ISOTHERMAL CRYSTALLIZATION IN LASER-QUENCHED GEAL THIN-FILMS

被引：6

作者：

AFONSO, CN

CATALINA, F

SOLIS, J

机构：

[1] Instituto de Optica, CSIC, 28006 Madrid

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 7卷 / 03期

关键词：

D O I：

10.1016/0921-5107(90)90022-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pulsed laser irradiation is used to induce melting and rapid solidification of micron-sized areas of initially amorphous GeAl films. The kinetics of the laser-induced process are followed by using time-resolved optical techniques and the microstructures formed upon solidification are studied by transmission electron microscopy. The results show that, depending on the irradiation power, mainly amorphous or crystalline meta- stable phases are formed and conclusions related to the role of undercooling in their formation are achieved. The laser-induced amorphous phase is found to be unstable and its isothermal crystallization at room temperature is kinetically studied. It is found that crystallization is nucleated by aluminium and it is a diffusion-controlled proces with a decreasing nucleation rate. © 1990.

引用

页码：169 / 175

页数：7

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