ANALYSIS OF A MICROWAVE FET OSCILLATOR USING AN EFFICIENT COMPUTER-MODEL FOR THE DEVICE

被引:8
作者
MADJAR, A
机构
关键词
D O I
10.1109/TMTT.1982.1131169
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:915 / 917
页数:3
相关论文
共 5 条
[1]   LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN [J].
JOHNSON, KM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (03) :217-227
[2]   A LARGE-SIGNAL MODEL FOR THE GAAS-MESFET [J].
MADJAR, A ;
ROSENBAUM, FJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (08) :781-788
[3]  
MADJAR A, 1979, N0001478C0256 WASH U
[4]  
MADJAR A, 1979, 1979 MTTS INT MICR S
[5]   A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376