GROWTH AND CHARACTERIZATION OF DOPED KTP CRYSTALS

The conductivity of high temperature solution grown KTP has been lowered by three orders of magnitude by doping with trivalent ions. The uniformity of the doping and the conductivity of the crystals was found to be uniform within a factor of 2. The distribution coefficient is calculated for the trivalent, divalent and monovalent ions used for doping. Ga, Al and Mg doped crystals are colorless and have optical transmission similar to that of undoped KTP. Doping with Cr and V introduce absorption bands in the visible region. The ferroelectric Curie temperature was measured in the Ga and Al doped samples. It was found that doping with 440 ppm Al or 1000 ppm Ga lowered the ferroelectric Curie temperature 7 and 22-degrees-C, respectively, from the value of 946-degrees-C found for undoped KTP.