EFFECT OF DOPANT ON REACTION BETWEEN POLYCRYSTALLINE SILICON AND THIN-FILM RHODIUM

被引:6
作者
PSARAS, PA
THOMPSON, RD
TU, KN
机构
关键词
D O I
10.1063/1.96180
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:250 / 252
页数:3
相关论文
共 14 条
[1]  
CHU WK, 1978, BACKSCATTERING SPECT, pCH4
[2]  
CZANDERNA AW, 1975, METHODS SURFACE ANAL, pCH6
[3]   CRYSTAL STRUCTURES OF RH2SI AND RH5SI3 WITH SOME NOTES ON RH-SI SYSTEM [J].
ENGSTROM, I .
ACTA CHEMICA SCANDINAVICA, 1963, 17 (03) :775-&
[4]  
ENGSTROM I, 1970, STRUCTURAL CHEM PLAT
[5]   SEEMAN-BOHLIN X-RAY DIFFRACTOMETER FOR THIN FILMS [J].
FEDER, R ;
BERRY, BS .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1970, 3 (OCT1) :372-&
[6]  
GHANDHI SK, 1983, VLSI PRINCIPLES FABR, pCH8
[7]  
MCCLURE WF, 1982, JCPDS12513 INT CTR D
[8]  
OHDOMARI I, 1980, RAD EFF, V40, P1
[9]  
OSBURN CM, 1982, 1ST P INT S VLSI SCI, V7, P213
[10]  
PSARAS PA, 1984, J APPL PHYS, V55, P3336