MICROCRYSTALLINE TO AMORPHOUS TRANSITION IN SILICON FROM MICROWAVE PLASMAS

被引：11

作者：

SCHELLENBERG, JJ

MCLEOD, RD

MEJIA, SR

CARD, HC

KAO, KC

机构：

[1] Univ of Manitoba, Winnipeg, Manit,, Can, Univ of Manitoba, Winnipeg, Manit, Can

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

CRYSTALS - Magnetic Field Effects - PLASMAS - Microwaves - SEMICONDUCTING FILMS - Growth - SEMICONDUCTOR MATERIALS - Thin Films - SILICON AND ALLOYS - Chemical Vapor Deposition;

D O I：

10.1063/1.96931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental study has been made of Si:H thin films prepared by microwave plasma deposition, in which conditions of electron cyclotron resonance can be obtained in the plasma due to an externally applied axial dc magnetic field B. It is observed that as B is increased through resonance, the structure of the deposited films changes from microcyrstalline to amorphous.

引用

页码：163 / 164

页数：2

共 15 条

[1]

Cullity B. D., 1956, ELEMENTS XRAY DIFFRA

[2] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J].