ELECTRON-TRANSPORT THROUGH ANTIDOT SUPERLATTICES IN SI/SI0.7GE0.3 HETEROSTRUCTURES

被引：19

作者：

TOBBEN, D

HOLZMANN, M

KUHN, S

LORENZ, H

ABSTREITER, G

KOTTHAUS, JP

SCHAFFLER, F

机构：

[1] UNIV MUNICH,SEKT PHYS,D-80539 MUNICH,GERMANY

[2] DAIMLER BENZ AG,FORSCHUNGSINST ULM,D-89081 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.50.8853

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport properties of electrons in antidot superlattices are studied in Si/Ge heterostructures. Lateral superlattices with periods between 830 and 500 nm were imposed upon high-mobility two-dimensional electron gases in Si/Si0.7Ge0.3 heterostructures by means of laser holography and reactive ion etching. Typical features known from GaAs/AlxGa1-xAs samples, such as low-field commensurability oscillations in the longitudinal resistivity rho(xx), additional nonquantized Hall plateaus, and quenching of the Hall effect around B = 0, are observed. From the position of the commensurability maxima in rho(xx) we conclude that the lateral potential is rather smooth.

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收藏

页码：8853 / 8856

页数：4

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