CHEMICAL INFLUENCE OF HOLES AND ELECTRONS ON DISLOCATION VELOCITY IN SEMICONDUCTORS

被引：41

作者：

FRISCH, HL

PATEL, JR

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.18.784

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：784 / &

共 14 条

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[6] ANISOTROPIC MOBILITIES IN PLASTICALLY DEFORMED GERMANIUM
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[7] PATEL JL, TO BE PUBLISHED
[8] CHARGED IMPURITY EFFECTS ON DEFORMATION OF DISLOCATION-FREE GERMANIUM
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CHAUDHURI, AR
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[9] PENNING P, 1959, PHYSICA, V25, P760
[10] PFANN WG, 1962, 1961 AM SOC MET SEM, P7