CHARACTERISTIC PROPERTIES OF III-VA/III-VB HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

YANO, M

ASHIDA, M

IWAI, Y

INOUE, M

机构：

[1] New Material Research Center, Osaka Institute of Technology, Osaka, 535, Asahi-ku Ohmiya

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90103-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam epitaxy of GaSb/AlSb and GaSb/GaAs heterostructures has been studied. From an analysis of the growth conditions and interface characteristics of the grown layers, it is shown that the interface of GaSb/AlSb can be formed as sharply on an atomic scale as that of GaAs/AlGaAs. The heterointerface of GaSb/GaAs, however, has a gradient in composition when it is grown by the conventional method. In order to eliminate the influence of residual arsenic molecules in the growth atmosphere and to obtain an abrupt interface, a successful growth procedure has been studied. Detailed analysis of the interface has been performed by Raman scattering and Auger measurements as well as in-situ monitoring of RHEED patterns. © 1989.

引用

页码：457 / 463

页数：7

共 10 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].