SUMMARY ABSTRACT - GROWTH OF CDTE AND HGCDTE BY MOLECULAR-BEAM EPITAXY

被引:11
作者
HARRIS, KA [1 ]
HWANG, S [1 ]
BLANKS, DK [1 ]
COOK, JW [1 ]
SCHETZINA, JF [1 ]
OTSUKA, N [1 ]
机构
[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词
D O I
10.1116/1.583379
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:581 / 582
页数:2
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