CORRELATION BETWEEN STRESS VOIDING OF AL(SI)(CU) METALLIZATIONS AND CRYSTAL ORIENTATION OF ALUMINUM GRAINS

被引：22

作者：

KORDIC, S

WOLTERS, RAM

TROOST, KZ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.354243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stress voiding behavior of Al(Si) (Cu) alloys has been investigated. The grain structure of the metal lines has been analyzed using the electron backscatter diffraction technique in a scanning electron microscope. A [111] fiber texture of aluminum has been observed perpendicular to the wafer surface. A correlation has been found between a high density of voids and the amount of misalignment of the [111] grain directions with respect to the wafer normal.

引用

页码：5391 / 5394

页数：4