EPITAXIAL ALN THIN-FILMS GROWN ON ALPHA-AL2O3 SUBSTRATES BY ECR DUAL-ION BEAM SPUTTERING

被引：6

作者：

OKANO, H

TANAKA, N

KOBAYASHI, M

USUKI, T

SHIBATA, K

机构：

[1] New Materials Research Center, SANYO Electric Co, Hirakata, 573

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

ALN; ALPHA-AL2O3; EPITAXIAL FILM; MISMATCH;

D O I：

10.1143/JJAP.34.5172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum nitride (AlN) thin films have been epitaxially grown on (001), (110) and (1 (1) over bar 2)Al2O3 substrates by ECR dual ion beam sputtering. It was found that (001)AlN could be epitaxially grown on (110)Al2O3 as well as on (001)Al2O3. Not only (110)AlN but also (116)AlN was epitaxially grown on (1 (1) over bar 2)Al2O3. The lattice mismatch in the two types of epitaxial growth was investigated by considering the chemical bonding between the oxygen atoms of alpha-Al2O3 and the aluminum stems of hexagonal AlN. The lattice mismatches of the (116)AlN//(1 (1) over bar 2)Al2O3 and (110)AlN//(1 (1) over bar 2)Al2O3 were +1.7% and -4.4%, respectively. The lattice mismatch suggests that epitaxial growth of (116)AlN as well as (110)AlN on (1 (1) over bar 2)AlO(3)is feasible.

引用

页码：5172 / 5177

页数：6

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