FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES

[1] FOWLER AB, 1963, B AM PHYS SOC, V8, P202

[2] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1099 - +

[3] KEYES RJ, 1962, P IRE, V50, P1822

[4] KLEINER WH, PRIVATE COMMUNICATIO

[5] QUANTUM MAGNETO-ABSORPTION PHENOMENA IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 311 - 318

[6] QUIST TM, 1963, B AM PHYS SOC, V8, P202

[7] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[9] BOUND EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1961, 7 (08) : 316 - &

[10] PARAMAGNETIC RESONANCE OF THE SHALLOW ACCEPTORS ZN AND CD IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 68 - 69

[1] FOWLER AB, 1963, B AM PHYS SOC, V8, P202

[2] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1099 - +

[3] KEYES RJ, 1962, P IRE, V50, P1822

[4] KLEINER WH, PRIVATE COMMUNICATIO

[5] QUANTUM MAGNETO-ABSORPTION PHENOMENA IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 311 - 318

[6] QUIST TM, 1963, B AM PHYS SOC, V8, P202

[7] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[9] BOUND EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1961, 7 (08) : 316 - &

[10] PARAMAGNETIC RESONANCE OF THE SHALLOW ACCEPTORS ZN AND CD IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 68 - 69