THEORY OF DECAY OF EXCESS CARRIER CONCENTRATIONS IN SEMICONDUCTORS

被引：4

作者：

EVANS, DA

LANDSBERG, PT

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1965年 / 26卷 / 02期

关键词：

D O I：

10.1016/0022-3697(65)90161-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：315 / +

页数：1

共 10 条

[1] THE RECOMBINATION OF HOT CARRIERS - THEORETICAL [J].

CONWELL, EM ;

ZUCKER, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :149-153

[2] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J].

EVANS, DA ;

LANDSBERG, PT .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :169-181

[3] RECOMBINATION-GENERATION NOISE THEORY FOR SEMICONDUCTORS IN EQUILIBRIUM [J].

EVANS, DA ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 267 (1331) :464-&

[4]

GOUREAU GM, 1957, ZH EKSP TEOR FIZ, V33, P158

[5]

GOUREAU GM, 1962, FIZ TVERD TELA, V4, P1938

[6] ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM AT LOW TEMPERATURES [J].

KOENIG, SH ;

BROWN, RD ;

SCHILLING, W .

PHYSICAL REVIEW, 1962, 128 (04) :1668-&

[7] AUGER EFFECT INVOLVING RECOMBINATION CENTRES [J].

LANDSBERG, PT ;

RHYSROBERTS, C ;

EVANS, DA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322) :325-&

[8]

PHELAN RJ, 1964, PHYS REV, V133, P1134

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10] THE RECOMBINATION OF HOT CARRIERS IN GERMANIUM-EXPERIMENTAL [J].

ZUCKER, J ;

CONWELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :141-147

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