GAS-SOURCE MOLECULAR-BEAM EPITAXY USING SI2H6 AND GEH4 AND X-RAY CHARACTERIZATION OF SI1-XGEX (O-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.33) ALLOYS

被引：9

作者：

LI, SH

CHUNG, SW

RHEE, JK

BHATTACHARYA, PK

机构：

[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.350639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gas-source molecular-beam epitaxy (MBE) has been used to grow SiGe alloys with Si2H6 and GeH4 as sources on (100) Si substrates. Single-crystalline epilayers with Ge composition as high as 33% have been produced at 610-degrees-C, the lowest temperature hitherto used for gas-source SiGe MBE. Growth parameters, growth modes, and the structural characteristics have been studied by a variety of in situ and ex situ techniques. Double-crystal x-ray diffraction data for the alloys have been obtained for the first time in thin mismatched layers.

引用

页码：4916 / 4919

页数：4

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