IN-SITU OBSERVATION OF ANODIC-DISSOLUTION PROCESS OF N-GAAS IN HCL SOLUTION BY ELECTROCHEMICAL ATOMIC-FORCE MICROSCOPE

被引：18

作者：

KOINUMA, M ^{[1
]}

UOSAKI, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC SCI,DEPT CHEM,PHYS CHEM LAB,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anodic dissolution of a GaAs(100) face was investigated by in situ electrochemical atomic force microscope (AFM). While no surface structure change was observed at -0.6 V (vs Ag/AgCl) where no current flowed, dome structure on surface was removed, and flat surface was obtained after keeping the potential at 0 V (vs Ag/AgCl) where anodic current of approximately 150 muA cm-2 flowed. An atomically resolved AFM image was obtained in the flat region and shows the surface is dominated by a (111) face after the anodic dissolution.

引用

页码：1543 / 1546

页数：4

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