MEASUREMENT OF HIGH-FREQUENCY DIELECTRIC CHARACTERISTICS IN THE MM-WAVE BAND FOR DIELECTRIC THIN-FILMS ON SEMICONDUCTOR SUBSTRATES

被引：41

作者：

IKUTA, K

UMEDA, Y

ISHII, Y

机构：

[1] NTT LSI Laboratories, Atsugi, KNG, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

DIELECTRIC THIN FILMS; THIN FILM CAPACITORS; HIGH-FREQUENCY CHARACTERISTICS; STRAY CORRECTION; SEMICONDUCTOR SUBSTRATES;

D O I：

10.1143/JJAP.34.L1211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using dielectric thin film capacitors and devices specially designed for correcting stray effect around the capacitors, the dielectric constant and dielectric loss up to 50 GHz can be successfully measured by the reflection coefficient measured with a network analyzer. The high-frequency characteristics are consistent with low-frequency characteristics measured with an LCR bridge. The relative error between the high-frequency and the low-frequency is estimated to be within 10%. The method is a practical way to obtain the characteristics of dielectric thin films accurately and quickly in final form.

引用

页码：L1211 / L1213

页数：3