POWER-SERIES APPROXIMATION USED IN SOFT THRESHOLD LUCKY DRIFT MODEL OF IMPACT IONIZATION

被引：8

作者：

MARSLAND, JS

机构：

[1] Dept. of Electron. and Electr. Eng., Sheffield Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1088/0268-1242/5/2/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The soft threshold lucky drift model of impact ionisation in semiconductors due to Marsland (1987) has been developed by replacing an approximation with a more accurate power series approximation. The model has been fitted to measure ionisation coefficients and the new results give better agreement to the soft threshold lucky drift model due to Ridley (1987), especially for InP and GaAs. Further agreement for Si is obtained when the same experimental data is used. The variation of mean free paths and the 'softness of threshold' factor due to the choice of different experimental data and different ionisation threshold energies is estimated in silicon. The lucky drift model with the power series approximation is also fitted to ionisation coefficients measured in Al xGa1-xAs and Ge and a chemical trend in the mean free path is observed for all the materials reported.

引用

页码：177 / 182

页数：6

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