RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES

[1] ANATASSAKIS E, 1970, SOLID STATE COMMUN, V8, P133

[2] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[5] CERDEIRA F, J VAC SCI TECHNOL

[6] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33

[7] RAMAN SCATTERING BY LOCAL MODES IN GERMANIUM-RICH SILICON-GERMANIUM ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (24) : 1209 - &

[8] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[9] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (12) : 993 - 996

[10] LANIN J, 1977, PHYS REV B, V16, P1510

[1] ANATASSAKIS E, 1970, SOLID STATE COMMUN, V8, P133

[2] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[5] CERDEIRA F, J VAC SCI TECHNOL

[6] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33

[7] RAMAN SCATTERING BY LOCAL MODES IN GERMANIUM-RICH SILICON-GERMANIUM ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (24) : 1209 - &

[8] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[9] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (12) : 993 - 996

[10] LANIN J, 1977, PHYS REV B, V16, P1510