ELECTRON TRAPPING INSTABILITIES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：21

作者：

YOUNG, ND

GILL, A

机构：

[1] Philips Res. Labs., Redhill, Surrey, Cross Oak Lane

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 01期

关键词：

D O I：

10.1088/0268-1242/5/1/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stability of polycrystalline silicon thin film transistors formed at low temperatures has been studied. Charge trapping in the deposited gate oxide is observed over a wide range of conditions. At high gate biases this is due to the passage of a tunnel current, and at lower biases to direct tunnelling into the traps. Trap concentrations, cross sections and energy levels have been deduced based upon a simple trapping model, and an empirical device lifetime model is presented.

引用

页码：72 / 77

页数：6

共 12 条

[1] Powell MJ, Chapman JA, Knapp AG, French ID, Hughes JR, Pearson AD, Edwards MJ, Ford RA, Hemmings MC, Hill OF, Nicholls DH, Wright NK, Proc. Soc. for Information Display, 29, (1988)
[2] Morozumi S, Araki R, Oshima H, Matsuo M, Nakazawa T, Sato T, (1986)
[3] Powell MJ, van Berkel C, Hughes JR, Appl. Phys. Lett., 54, 14, (1989)
[4] Mimura A, Konishi N, Ono K, Ohwada J, Hosokawa Y, Ono Y, Suzuki T, Miyata K, Kawakami H, IEEE Trans. Electron Devices, 36
[5] Dimitriadis CA, Coxon PA, Appl. Phys. Lett., 54, 7, (1989)
[6] Young ND, Gill A, Clarence IR, J. Appl. Phys., 66, 1, (1989)
[7] Brotherton SD, Young ND, Gill A, (1988)
[8] Nicollian EH, Brews JR
[9] Nicollian EH, Berglund CN, Schmidt PF, Andrews JM, J. Appl. Phys., 42, 13, (1977)
[10] Adams AC, Alexander FB, Capio CD, Smith TE, J. Electrochem. Soc., 128, 7, (1981)

← 1 2 →