FEMTOSECOND OPTICAL-ABSORPTION MEASUREMENTS OF ELECTRON-PHONON SCATTERING GAAS QUANTUM-WELLS

被引：16

作者：

TURNER, K ^{[1
]}

ROTA, L ^{[1
]}

TAYLOR, RA ^{[1
]}

RYAN, JF ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a combined experimental and theoretical investigation of intra- and intersubband carrier relaxation in GaAs/AlAs quantum wells following femtosecond laser excitation at low density. Time-resolved optical absorption has been measured using 125 fs pulses from a tunable Ti:sapphire laser which allows carriers to be excited preferentially into different subbands. The experiments have been analyzed using a multi-subband Monte Carlo simulation which contains all the important scattering mechanisms. Electron-phonon scattering rates obtained from dielectric continuum theory have been used, and we find excellent agreement with the experiment. The dominance of interface phonons in intrasubband relaxation is confirmed. © 1995 American Institute of Physics.

引用

页码：3188 / 3190

页数：3

共 14 条

[1] EFFECTS OF BOUNDARY-CONDITIONS ON CONFINED OPTICAL PHONONS IN SEMICONDUCTOR NANOSTRUCTURES [J].