GAN LINEAR ELECTROOPTIC EFFECT

被引:57
作者
LONG, XC
MYERS, RA
BRUECK, SRJ
RAMER, R
ZHENG, K
HERSEE, SD
机构
[1] UNIV NEW MEXICO,DEPT PHYS & ASTRON,ALBUQUERQUE,NM 87131
[2] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131
关键词
D O I
10.1063/1.115547
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurements of the linear (Pockels) electro-optical coefficient of wurtzite GaN are reported. The values for the electro-optic coefficients r(33) and r(31) are 1.91 +/- 0.35 and 0.57 +/- 0.11 pm/V at 633 nm, respectively, in agreement with extrapolations from measured second-harmonic generation coefficients (chi(33)((2)) = -20 +/- 6 pm/V and chi(31)((2)) pm/V) suggesting that the dominant contributions are electronic in origin. Measurements were performed using a Mach-Zehnder interferometer with LiNbO3 as a reference material. Piezoelectric effects were also observed. (C) 1995 American Institute of Physics.
引用
收藏
页码:1349 / 1351
页数:3
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