REPEATED REMOVAL OF THIN-LAYERS OF SILICON BY ANODIC-OXIDATION

[1] Adley J. M., 1969, Semiconductor silicon, P721

[2] ARCHER RJ, 1964, ELLIPSOMETRY MEASURE, P261

[3] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[4] BENJAMINI EA, 1963, SEP EL SOC M NEW YOR

[5] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[6] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &

[7] ANODIC-OXIDATION OF SILICON IN ORGANIC BATHS CONTAINING FLUORINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 526 - 532

[8] CROSET M, 1971, OCT EL SOC M CL

[9] A-C PROPERTIES OF ANODIC OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) : 1210 - +

[10] DUBROSKI LA, 1962, RUSS J PHYS CHEM, V36, P1188

[1] Adley J. M., 1969, Semiconductor silicon, P721

[2] ARCHER RJ, 1964, ELLIPSOMETRY MEASURE, P261

[3] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[4] BENJAMINI EA, 1963, SEP EL SOC M NEW YOR

[5] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[6] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &

[7] ANODIC-OXIDATION OF SILICON IN ORGANIC BATHS CONTAINING FLUORINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 526 - 532

[8] CROSET M, 1971, OCT EL SOC M CL

[9] A-C PROPERTIES OF ANODIC OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) : 1210 - +

[10] DUBROSKI LA, 1962, RUSS J PHYS CHEM, V36, P1188