EVIDENCE OF ISOVALENT IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

LEROUX, M

NEU, G

CONTOUR, JP

MASSIES, J

VERIE, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2996 / 2998

页数：3

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