THICKNESS AND EFFECTIVE ELECTRON MASS MEASUREMENTS FOR THIN SILICON DIOXIDE FILMS USING TUNNELING CURRENT OSCILLATIONS

被引：70

作者：

ZAFAR, S ^{[1
]}

CONRAD, KA ^{[1
]}

LIU, Q ^{[1
]}

IRENE, EA ^{[1
]}

HAMES, G ^{[1
]}

KUEHN, R ^{[1
]}

WORTMAN, JJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method is presented for measuring the thicknesses of thin (< 60 Angstrom) silicon dioxide (SiO2) films using the oscillations in the Fowler-Nordheim tunneling currents. An important feature of the proposed method is that the accuracy of this method increases with decreasing oxide thickness and thicknesses changes of similar to 1 Angstrom can be detected. The oscillations are also used for measuring the average effective electron mass in the conduction band of SiO2.

引用

页码：1031 / 1033

页数：3

共 12 条

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P446
[2] FIELD IONIZATION NEAR NONUNIFORM METAL SURFACES
ALFERIEFF, ME
DUKE, CB
[J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (03) : 938 - +
[3] REFRACTIVE-INDEX PROFILES OF THERMALLY GROWN AND CHEMICALLY VAPOR-DEPOSITED FILMS ON SILICON
CHONGSAWANGVIROD, S
IRENE, EA
KALNITSKY, A
TAY, SP
ELLUL, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) : 3536 - 3541
[4] BALLISTIC ELECTRON-TRANSPORT IN THIN SILICON DIOXIDE FILMS
FISCHETTI, MV
DIMARIA, DJ
DORI, L
BATEY, J
TIERNEY, E
STASIAK, J
[J]. PHYSICAL REVIEW B, 1987, 35 (09) : 4404 - 4415
[5] Electron emission in intense electric fields
Fowler, RH
Nordheim, L
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181
[6] SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON
MASERJIA.J
PETERSSO.G
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 335 - 339
[7] TUNNELING IN THIN MOS STRUCTURES
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003
[8] MASERJIAN J, 1988, PHYSICS CHEM SIO2 SI, P505
[9] PETERSSON GP, 1974, SOLID STATE ELECTRON, V18, P996
[10] CHARACTERIZATION OF THE SI/SIO2 INTERFACE MORPHOLOGY FROM QUANTUM OSCILLATIONS IN FOWLER-NORDHEIM TUNNELING CURRENTS
POLER, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 88 - 95

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