ELECTRONIC-STRUCTURE OF TRANSITION-ATOM IMPURITIES IN SEMICONDUCTORS - SUBSTITUTIONAL 3D IMPURITIES IN SILICON

被引：93

作者：

ZUNGER, A

LINDEFELT, U

机构：

[1] UNIV COLORADO,DEPT PHYS,BOULDER,CO 80309

[2] UNIV LUND,DEPT THEORET PHYS,S-22362 LUND,SWEDEN

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.27.1191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1191 / 1227

页数：37

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