EFFECT OF A THIN TRANSITION LAYER AT A SISIO2 INTERFACE ON ELECTRON-MOBILITY AND ENERGY-LEVELS

被引：54

作者：

STERN, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1098(77)90674-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：163 / 166

页数：4

共 26 条

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