ROLE OF SATELLITE VALLEYS IN IONIZATION RATE ENHANCEMENT IN MULTIPLE QUANTUM-WELL AVALANCHE PHOTODIODES

被引：19

作者：

CZAJKOWSKI, IK

ALLAM, J

ADAMS, AR

机构：

[1] Department of Physics, University of Surrey Guildford

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 16期

关键词：

Photodiodes; Semiconductor devices and materials;

D O I：

10.1049/el:19900843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The enhancement of the electron ionisation rate in multiple quantum well avalanche photodiodes is determined by the band offsets in the satellite valleys rather than the V valley as previously assumed for semiconductors where the threshold field for the Gunn effect is less than that for impact ionisation. Monte Carlo calculations in a model GaAs/Al0.4SGa0.S/As heterostructure show no enhancement caused by the band offsets. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

收藏

页码：1311 / 1313

页数：3

相关论文

共 10 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205

[3] PHYSICS OF THE ENHANCEMENT OF IMPACT IONIZATION IN MULTIQUANTUM WELL STRUCTURES [J].

BRENNAN, K ;

HESS, K ;

CAPASSO, F .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1897-1899

[4] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].

BULMAN, GE ;

ROBBINS, VM ;

BRENNAN, KF ;

HESS, K ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[5] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[6] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[7] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4587-4590

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[9]

RIDLEY BK, 1987, IEE PROC-J, V132, P177

[10] PRESSURE-DEPENDENCE OF GAAS/ALXGA1-XAS QUANTUM-WELL BOUND-STATES - THE DETERMINATION OF VALENCE-BAND OFFSETS [J].

WOLFORD, DJ ;

KUECH, TF ;

BRADLEY, JA ;

GELL, MA ;

NINNO, D ;

JAROS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1043-1050