NATURE OF THE STEP-HEIGHT TRANSITION ON VICINAL SI(001) SURFACES

被引:97
作者
PEHLKE, E
TERSOFF, J
机构
[1] IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1103/PhysRevLett.67.465
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Si(001)2 x 1 surface is expected to undergo a phase transition from single- to double-atomic-height steps with increasing angle of miscut. Here we show that this transition is quite different than previously believed, involving something like a "devil's staircase" of transitions in a mixed phase consisting of a complex sequence of single and double steps. Even at low angles, where only single steps occur, the areas of 2 x 1 and 1 x 2 regions are unequal, in agreement with recent experimental results.
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页码:465 / 468
页数:4
相关论文
共 15 条
  • [1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES
    ALERHAND, OL
    VANDERBILT, D
    MEADE, RD
    JOANNOPOULOS, JD
    [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (17) : 1973 - 1976
  • [2] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES
    ALERHAND, OL
    BERKER, AN
    JOANNOPOULOS, JD
    VANDERBILT, D
    HAMERS, RJ
    DEMUTH, JE
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (20) : 2406 - 2409
  • [3] 1ST-ORDER TRANSITIONS BETWEEN SURFACE PHASES WITH DIFFERENT STEP STRUCTURES - REPLY
    ALERHAND, OL
    BERKER, AN
    JOANNOPOULOS, JD
    VANDERBILT, D
    HAMERS, RJ
    DEMUTH, JE
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (07) : 962 - 962
  • [4] ONE-DIMENSIONAL ISING-MODEL AND THE COMPLETE DEVILS STAIRCASE
    BAK, P
    BRUINSMA, R
    [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (04) : 249 - 251
  • [5] 1ST-ORDER TRANSITIONS BETWEEN SURFACE PHASES WITH DIFFERENT STEP STRUCTURES
    BARTELT, NC
    EINSTEIN, TL
    ROTTMAN, C
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (07) : 961 - 961
  • [6] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
  • [7] KROEMER H, 1986, MATER RES SOC S P, V67, P3
  • [8] MARCHENKO VI, 1981, JETP LETT+, V33, P381
  • [9] MARCHENKO VI, 1980, ZH EKSP TEOR FIZ, V52, P129
  • [10] MEADE RD, 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, P123