HIGH BREAKDOWN VOLTAGE ALAS/INGAAS QUANTUM BARRIER VARACTOR DIODES

被引：17

作者：

REDDY, VK

NEIKIRK, DP

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 05期

关键词：

DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on single quantum barrier AlAs/In0.53Ga0.47As varactor diodes intended as submillimetre wavelength frequency multipliers that exhibit extremely high breakdown voltage and excellent capacitance modulation characteristics. Record breakdown voltages as high as 12 V were achieved with a composite 50 angstrom/50 angstrom/50 angstrom thick In0.52Al0.48/AlAs/In0.52Al0.48As barrier sandwiched between 3000 angstrom (1.2 x 10(17) cm-3) In0.53Ga0.47As depletion regions.

引用

页码：464 / 466

页数：3

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