EDGE STATE TRANSPORT IN HIGH MAGNETIC-FIELDS IN A 2-DIMENSIONAL ELECTRON-GAS

被引：14

作者：

HAUG, RJ ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

STREDA, P ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

SURFACE SCIENCE | 1990年 / 229卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90877-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experiments on Hall-bar samples with a cross-gate give quantized values of the resistance for integer filling factors. For non-integer filling factors a strong dependence on sample geometry is found. We get a different coupling between gate voltage induced edge states of different levels. A non-equilibrium population of edge states can also be observed for narrow and long Hall-bar samples with good contacts. © 1990.

引用

页码：229 / 232

页数：4

共 14 条

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