APPLICATIONS OF FOCUSED ION-BEAMS

被引:6
作者
BANERJEE, I
LIVENGOOD, RH
机构
[1] Intel Corporation, Santa Clara
关键词
Failure analysis - Gallium compounds - Integrated circuits - Metals - Nondestructive examination - Vapor deposition;
D O I
10.1149/1.2056082
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Using a focused ion beam of Ga+ ions at 25 keV, one can obtain usable beams as small as 50 nm in diameter. As a result of this, small and precise areas can be milled to obtain cross sections, small vias, and cut metal lines. Additionally, the ion beam can be used to induce metal deposition. This deposition allows nondestructive design changes directly on the device, and provides increased failure analysis capabilities. Examples on the use of the FIB for such applications are given and some drawbacks are discussed. Methods employed to overcome the drawbacks also are discussed.
引用
收藏
页码:183 / 188
页数:6
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