SILICON TRIANGULAR BARRIER DIODES BY MBE USING SOLID-PHASE EPITAXIAL REGROWTH

被引：12

作者：

STREIT, DC

ALLEN, FG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：254 / 256

页数：3

共 17 条

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[8]

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