FERROELECTRIC MEMORIES

被引：152

作者：

DEARAUJO, CAP

MCMILLAN, LD

MELNICK, BM

CUCHIARO, JD

SCOTT, JF

机构：

[1] UNIV COLORADO, DEPT PHYS, BOULDER, CO 80309 USA

[2] SYMETRIX CORP, COLORADO SPRINGS, CO 80949 USA

来源：

FERROELECTRICS | 1990年 / 104卷

关键词：

D O I：

10.1080/00150199008223827

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A status reFort is Tiven on the development of thin-film ferroelectric memories, both by sputterin? and by sol-gel techniques, integrated onto gallium arsenide or silicon. Emphasis is on lead zirconate titanate (PZT) materials. Progress in ferroelectric materials, electrical characterization, and circuit desiy is reviewed. Commercial ?arts recently developed by Ramtron Cor?. and Krysalis Cor?. are included, in addition to work by our own group. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：241 / 256

页数：16

共 17 条

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