DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE

被引：134

作者：

WILLIAMS, R

机构：

来源：

关键词：

D O I：

10.1063/1.1708872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3411 / &

共 19 条

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[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS
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[6] PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS
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MEHAL, EW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) : 829 - &
[7] HENISCH HK, 1957, RECTIFYING SEMICONDU, pCH7
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