STRUCTURAL AND PHOTOELECTRONIC PROPERTIES OF THALLIUM INDIUM SULFIDE

被引：11

作者：

KALKAN, N ^{[1
]}

PAPADOPOULOS, D ^{[1
]}

ANAGNOSTOPOULOS, AN ^{[1
]}

SPYRIDELIS, J ^{[1
]}

机构：

[1] ISTANBUL UNIV,DEPT PHYS,ISTANBUL,TURKEY

来源：

MATERIALS RESEARCH BULLETIN | 1993年 / 28卷 / 07期

关键词：

LAYERED COMPOUNDS; TERNARY COMPOUNDS; SULFIDES; INDIUM; THALLIUM;

D O I：

10.1016/0025-5408(93)90113-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A structural investigation by Transmission Electron Microscopy confirmed the presence of planar faults parallel to the (001)tetr-plane of TlInS2. Their density corresponds to a mean repeat distance of about eight times the lattice parameter c. On the other hand, two energy levels forming two subbands and acting as hole traps at 0.028 and 0.050 eV above the valence band edge of TlInS2 were determined by an analysis of modulated photocurrents induced by an intensity modulated light beam. Their capture coefficients were of the order of magnitude 10(-13) and 10(-15) cm3 s-1 at 300 K, respectively.

引用

页码：693 / 707

页数：15

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