共 18 条
[5]
APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1988, 6 (03)
:1327-1332
[6]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1979, 19 (04)
:2074-2082
[7]
THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES
[J].
PHYSICAL REVIEW B,
1984, 29 (02)
:785-792
[8]
ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1987, 5 (04)
:834-837
[9]
THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES
[J].
PHYSICAL REVIEW B,
1990, 41 (17)
:12002-12012
[10]
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9