ACTIVE-MODE LOCKING OF INGAASP BREWSTER ANGLED SEMICONDUCTOR-LASERS

被引：11

作者：

CHANG, JTK

VUKUSIC, JI

机构：

[1] Imperial Coll, Blackett Lab, London,, Engl, Imperial Coll, Blackett Lab, London, Engl

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1109/JQE.1987.1073498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1329 / 1331

页数：3

共 9 条

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[4]

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[7] DIRECT MODULATION AND ACTIVE-MODE LOCKING OF ULTRAHIGH SPEED GAALAS LASERS AT FREQUENCIES UP TO 18 GHZ [J].

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YARIV, A .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :326-328

[8] LOW-THRESHOLD CURRENT CW OPERATION OF MULTIPLE INFIL BURIED HETEROSTRUCTURE 1.3 MU-M GAINASP LASERS [J].

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[9] GENERATION OF SHORT OPTICAL PULSES IN SEMICONDUCTOR-LASERS BY COMBINED DC AND MICROWAVE CURRENT INJECTION [J].

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LOGAN, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (09) :1340-1350

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