HIGH-TRANSCONDUCTANCE INSULATING-GATE INP/INGAAS BURIED P-BUFFER DH-MODFETS GROWN BY MOVPE

被引：4

作者：

CHEN, YK

TEMKIN, H

TANBUNEK, T

LOGAN, RA

NOTTENBURG, RN

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期

关键词：

D O I：

10.1109/55.31704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：162 / 164

页数：3

共 10 条

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[2]

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