GATE-LENGTH DEPENDENCE OF THE SPEED OF SSI CIRCUITS USING SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR TECHNOLOGY

被引：47

作者：

SHAH, NJ ^{[1
]}

PEI, SS ^{[1
]}

TU, CW ^{[1
]}

TIBERIO, RC ^{[1
]}

机构：

[1] NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1109/T-ED.1986.22530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / 547

页数：5

共 10 条

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[2] CAMNITZ LH, 1984, DEC IEDM, P360
[3] ULTRA-HIGH-SPEED RING OSCILLATORS BASED ON SELF-ALIGNED-GATE MODULATION-DOPED N+-(AL,GA)AS/GAAS FETS
CIRILLO, NC
ABROKWAH, JK
FRAASCH, AM
VOLD, PJ
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 772 - 773
[4] CIRILLO NC, 1984, OCT P GAAS INT CIRC, P167
[5] COMPARISON OF GAAS-MESFET NOISE FIGURES
GORONKIN, H
NAIR, V
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 47 - 49
[6] HENDEL RH, 1984, IEEE ELECTR DEVICE L, V5, P406, DOI 10.1109/EDL.1984.25965
[7] HENDEL RH, 1984, DEC IEDM, P857
[8] SCHLIER AR, 1985, NOV GAAS IC S
[9] 11 PS RING OSCILLATORS WITH SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS
SHAH, NJ
PEI, SS
TU, CW
HENDEL, RH
TIBERIO, RC
[J]. ELECTRONICS LETTERS, 1985, 21 (04) : 151 - 152
[10] SUZUKI M, 1985, IEEE ELECTR DEVICE L, V6, P181, DOI 10.1109/EDL.1985.26089