RADIATION-ENHANCED DIFFUSION OF ION-IMPLANTED BISMUTH IN CADMIUM-SULFIDE

被引：6

作者：

ARMITAGE, SA ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT ENGN SCI,PARKS RD,OXFORD OX1 3PJ,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1975年 / 8卷 / 17期

关键词：

D O I：

10.1088/0022-3727/8/17/004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2034 / 2042

页数：9

共 19 条

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[8] ELECTRON MICROSCOPE STUDY OF RADIATION DAMAGE IN BISMUTH ION-IMPLANTED CDS [J].

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