OPTICAL-PROPERTIES OF IN1-XGAXASYP1-Y ALLOYS

被引：81

作者：

ADACHI, S

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12612

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12612 / 12621

页数：10

共 37 条

[1] QUADRATIC ELECTRO-OPTIC (KERR) EFFECTS IN ZINCBLEND-TYPE SEMICONDUCTORS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN [J].

ADACHI, S ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1499-1504

[2] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4869-4876

[3] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].

ADACHI, S .

PHYSICAL REVIEW B, 1987, 35 (14) :7454-7463

[4] LATTICE THERMAL RESISTIVITY OF III-V COMPOUND ALLOYS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1844-1848

[5] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[6] OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOYS [J].

ADACHI, S .

PHYSICAL REVIEW B, 1988, 38 (17) :12345-12352

[7] INTERNAL STRAIN AND PHOTO-ELASTIC EFFECTS IN GA1-XALXAS/GAAS AND IN1-XGAXASYP1-Y/INP CRYSTALS [J].

ADACHI, S ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6620-6627

[8] REFRACTIVE-INDEXES OF III-V COMPOUNDS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5863-5869

[9] MODEL DIELECTRIC-CONSTANTS OF SI AND GE [J].

ADACHI, S .

PHYSICAL REVIEW B, 1988, 38 (18) :12966-12976

[10] LINEAR ELECTRO-OPTIC EFFECTS IN ZINCBLEND-TYPE SEMICONDUCTORS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN [J].

ADACHI, S ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :74-80

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