HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY-BARRIER

被引：7

作者：

EBOTHE, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2076 / 2081

页数：6

共 29 条

[1] COLLECTION VELOCITY OF EXCESS MINORITY-CARRIERS AT METAL-SEMICONDUCTOR CONTACTS IN SOLAR-CELLS [J].

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4964-4967

[2]

CHARLES HK, 1970, SOL CELLS, V1, P327

[3] MINORITY-CARRIER DIFFUSION LENGTHS IN SILICON SLICES AND SHALLOW JUNCTION DEVICES [J].

CHU, TL ;

STOKES, ED .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :173-182

[4] DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD [J].

DRESNER, J ;

SZOSTAK, DJ ;

GOLDSTEIN, B .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :998-999

[5]

Ebothe J., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P393

[6]

EBOTHE J, THIN SOLID FILMS

[7] DIFFUSION LENGTH OF MINORITY-CARRIER IN NORMAL-TYPE SEMICONDUCTORS - A PHOTO-ELECTROCHEMICAL DETERMINATION IN AQUEOUS SOLVENTS [J].

ETCHEBERY, A ;

ETMAN, M ;

FOTOUHI, B ;

GAUTRON, J ;

SCULFORT, JL ;

LEMASSON, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8867-8873

[8] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[9] PHOTO-ELECTROCHEMICAL DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN II-VI-COMPOUNDS [J].

GAUTRON, J ;

LEMASSON, P .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :332-337

[10]

Goodman Alvin M., 1961, J APPL PHYS, V32, P2550

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