LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION BY DIRECT PHOTOLYSIS USING HIGH-POWER KRYPTON FLASH LAMPS

被引：2

作者：

DULAC, O ^{[1
]}

NISSIM, YI ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET PAB,LAB BAGNEUX,F-92225 BAGNEUX,FRANCE

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 07期

关键词：

SILICON COMPOUNDS; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1049/el:19940409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon nitride films have been deposited on InP using a photochemical process. A high power krypton flash lamp was used to produce the direct photolysis of conventional reactive gases with the highest deposition rates ever reported in UVCVD (93 angstrom/min). Also, the high UV fluence allows a cold process and results in films with excellent structural and electrical properties.

引用

页码：602 / 603

页数：2

共 6 条

[1]

DEBAUCHE C, 1993, THESIS U PARIS 7 FRA

[2]

FLICSTEIN J, 1991, Patent No. 9103964

[3]

GUIZOT JL, 1989, THESIS U PARIS 6 FRA

[4]

LEBLAND F, 1992, THESIS U PARIS 7 FRA

[5]

SCAVANNEC A, 1990, SOLID STATE ELECTR S, V33, P429

[6] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY PHOTO-ASSISTED CHEMICAL-VAPOR-DEPOSITION UNDER CONTROLLED DECOMPOSITION OF AMMONIA [J].

YOSHIMOTO, M ;

OHTSUKI, T ;

TAKUBO, K ;

KOMODA, M ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6132-6136

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