MODEL FOR REEMISSION DURING HYDROGEN-ION IMPLANTATION

被引：2

作者：

ZHDANOV, SK

OGORODNIKOVA, OV

PISAREV, AA

机构：

[1] Moscow Engineering Physics Institute, Moscow

来源：

VACUUM | 1993年 / 44卷 / 09期

关键词：

D O I：

10.1016/0042-207X(93)90255-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple diffusion model is proposed for the description of hydrogen migration and re - emission during ion bombardment. Ions slowing down far from the target surface, hydrogen interaction with defects, and hydrogen recombination at the surface are included in the model. The model is shown to give good agreement with experiments for re-emission of deuterium from pyrographite.

引用

页码：929 / 931

页数：3